Partic. vol. 15 pp. 90-93 (August 2014)
doi: 10.1016/j.partic.2013.01.009

White-light-emitting diodes using GaN-excited CdSe/CdS/ZnS quantum dots

Yijun Lin^a, Yu Zhang^a,b,*, Jia Zhao^a, Pengfei Gu^b, Ke Bi^b, Qiuran Zhang^a, Hairong Chu^c, Tieqiang Zhang^b, Tian Cui^b, Yiding Wang^a, Jun Zhao^d, William W. Yu^a,d,e,*

yuzhang@jlu.edu.cnwyu6000@gmail.com

Abstract

Fluorescence-based white-light-emitting diodes (WLEDs) were fabricated using blue GaN chips and green- and red-emitting CdSe/CdS/ZnS quantum dots (QDs). The coordinate and color temperature of the WLEDs could be varied because of the size-tunable emission of CdSe QDs from 510 to 620 nm. Warm and cold white emissions were confirmed with the color temperature ranging from 4000 to 9000 K. Color coordinates were analyzed at different bias. The fast enhancement of blue emission resulted in the shift of color coordinates to the cold side. The stability of white emission during operation was analyzed; stable spectra were achieved within 90 min.

Graphical abstract

Keywords

GaN; Quantum dots; White-light-emitting diode; Stability